MJE172
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- Mfr.Part #
- MJE172
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A TO126
- Stock
- 49,747
- In Stock ：
- 49,747
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- JESD-609 Code :
- e3
- Base Part Number :
- MJE172
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 1.7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 1.5W
- hFE Min :
- 50
- Transistor Application :
- SWITCHING
- Width :
- 3mm
- Height :
- 11.1mm
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 100V
- Frequency :
- 50MHz
- Weight :
- 4.535924g
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Current Rating :
- 3A
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Radiation Hardening :
- No
- Power Dissipation :
- 12.5W
- Collector Emitter Voltage (VCEO) :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-225AA, TO-126-3
- Gain Bandwidth Product :
- 50MHz
- Max Collector Current :
- 3A
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -80V
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 80V
- Published :
- 2006
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Length :
- 7.8mm
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Pin Count :
- 3
- Transition Frequency :
- 50MHz
- Datasheets
- MJE172
MJE172 Documents
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PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
MJE172G Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJE172G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE172G Applications
There are a lot of ON Semiconductor
MJE172G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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