MJE172
- Mfr.Part #
- MJE172
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A TO126
- Stock
- 49,747
- In Stock :
- 49,747
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Length :
- 7.8mm
- Base Part Number :
- MJE172
- Voltage - Rated DC :
- -80V
- Published :
- 2006
- Height :
- 11.1mm
- Power Dissipation :
- 12.5W
- Transition Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Max Collector Current :
- 3A
- Element Configuration :
- Single
- hFE Min :
- 50
- Operating Temperature :
- -65°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 100V
- Package / Case :
- TO-225AA, TO-126-3
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 50MHz
- Collector Emitter Saturation Voltage :
- 1.7V
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Weight :
- 4.535924g
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1.5W
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Width :
- 3mm
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Current Rating :
- 3A
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- Datasheets
- MJE172
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PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
MJE172G Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJE172G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE172G Applications
There are a lot of ON Semiconductor
MJE172G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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