MJE171G
- Mfr.Part #
- MJE171G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A TO126
- Stock
- 38,955
- In Stock :
- 38,955
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Max Collector Current :
- 3A
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Power - Max :
- 1.5W
- Power Dissipation :
- 12.5W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 11.0998mm
- Length :
- 7.7978mm
- Current Rating :
- -3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Surface Mount :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- Transition Frequency :
- 50MHz
- Package / Case :
- TO-225AA, TO-126-3
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Frequency :
- 50MHz
- Width :
- 2.9972mm
- Gain Bandwidth Product :
- 50MHz
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.7V
- hFE Min :
- 50
- Packaging :
- Bulk
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 7V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Weight :
- 4.535924g
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- Voltage - Rated DC :
- -60V
- Published :
- 2000
- Collector Emitter Breakdown Voltage :
- 60V
- Base Part Number :
- MJE171
- Max Power Dissipation :
- 1.5W
- Element Configuration :
- Single
- Datasheets
- MJE171G
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PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
MJE171G Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJE171G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -3A
a transition frequency of 50MHz
MJE171G Applications
There are a lot of ON Semiconductor
MJE171G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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