MJE171G

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Mfr.Part #
MJE171G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 60V 3A TO126
Stock
38,955
In Stock :
38,955

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Max Collector Current :
3A
Number of Pins :
3
Transistor Element Material :
SILICON
Number of Terminations :
3
Operating Temperature :
-65°C~150°C TJ
Number of Elements :
1
Power - Max :
1.5W
Power Dissipation :
12.5W
Time@Peak Reflow Temperature-Max (s) :
40
Height :
11.0998mm
Length :
7.7978mm
Current Rating :
-3A
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 100mA 1V
Polarity/Channel Type :
PNP
Peak Reflow Temperature (Cel) :
260
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Surface Mount :
No
Collector Emitter Voltage (VCEO) :
60V
Transition Frequency :
50MHz
Package / Case :
TO-225AA, TO-126-3
Terminal Finish :
Tin (Sn)
Current - Collector Cutoff (Max) :
100nA ICBO
ECCN Code :
EAR99
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Frequency :
50MHz
Width :
2.9972mm
Gain Bandwidth Product :
50MHz
Mounting Type :
Through Hole
Collector Emitter Saturation Voltage :
1.7V
hFE Min :
50
Packaging :
Bulk
REACH SVHC :
No SVHC
Collector Base Voltage (VCBO) :
80V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Factory Lead Time :
2 Weeks
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
7V
Radiation Hardening :
No
Lead Free :
Lead Free
Pbfree Code :
yes
Weight :
4.535924g
Vce Saturation (Max) @ Ib, Ic :
1.7V @ 600mA, 3A
Voltage - Rated DC :
-60V
Published :
2000
Collector Emitter Breakdown Voltage :
60V
Base Part Number :
MJE171
Max Power Dissipation :
1.5W
Element Configuration :
Single
Datasheets
MJE171G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE171G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Base Part Number:MJE171, MJE171G pinout, MJE171G datasheet PDF, MJE171G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE171G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE171G


PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

MJE171G Overview


In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

MJE171G Features


the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -3A
a transition frequency of 50MHz


MJE171G Applications


There are a lot of ON Semiconductor
MJE171G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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