MJE171G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

50MHz

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Height :

11.0998mm

Published :

2000

Collector Emitter Saturation Voltage :

1.7V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Power Dissipation :

12.5W

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-60V

Transistor Application :

SWITCHING

hFE Min :

50

Element Configuration :

Single

Transistor Type :

PNP

Surface Mount :

No

Transistor Element Material :

SILICON

Gain Bandwidth Product :

50MHz

JESD-609 Code :

e3

Radiation Hardening :

No

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 600mA, 3A

Width :

2.9972mm

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

2 Weeks

Lead Free :

Lead Free

Packaging :

Bulk

Frequency :

50MHz

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1.5W

Collector Emitter Voltage (VCEO) :

60V

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

3A

Number of Pins :

3

Current Rating :

-3A

Length :

7.7978mm

Number of Elements :

1

Operating Temperature :

-65°C~150°C TJ

Base Part Number :

MJE171

Power - Max :

1.5W

Polarity/Channel Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Terminations :

3

Pin Count :

3

Package / Case :

TO-225AA, TO-126-3

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

80V

Emitter Base Voltage (VEBO) :

7V

Weight :

4.535924g