MJE171
- Mfr.Part #
- MJE171
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A TO126
- Stock
- 15,468
- In Stock :
- 15,468
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Application :
- SWITCHING
- Weight :
- 4.535924g
- Height :
- 11.0998mm
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- Frequency :
- 50MHz
- Transition Frequency :
- 50MHz
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 50
- Collector Emitter Voltage (VCEO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin (Sn)
- Power - Max :
- 1.5W
- Pin Count :
- 3
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Length :
- 7.7978mm
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 3A
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Width :
- 2.9972mm
- Power Dissipation :
- 12.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Collector Emitter Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 50MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- -3A
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~150°C TJ
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Voltage - Rated DC :
- -60V
- Packaging :
- Bulk
- Base Part Number :
- MJE171
- Max Power Dissipation :
- 1.5W
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Published :
- 2000
- Collector Emitter Saturation Voltage :
- 1.7V
- Surface Mount :
- No
- Datasheets
- MJE171
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PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
MJE171G Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJE171G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -3A
a transition frequency of 50MHz
MJE171G Applications
There are a lot of ON Semiconductor
MJE171G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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