MJE170

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

40V

Max Collector Current :

3A

Max Power Dissipation :

1.5W

Number of Elements :

1

Transistor Type :

PNP

Frequency :

50MHz

Transistor Application :

SWITCHING

Transition Frequency :

50MHz

Current Rating :

2A

Collector Emitter Voltage (VCEO) :

40V

Voltage - Rated DC :

-40V

Transistor Element Material :

SILICON

Weight :

4.535924g

Power Dissipation :

12.5W

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 600mA, 3A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

100nA ICBO

Lead Free :

Lead Free

Packaging :

Bulk

Pbfree Code :

yes

Element Configuration :

Single

hFE Min :

50

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

60V

Package / Case :

TO-225AA, TO-126-3

Operating Temperature :

-65°C~150°C TJ

Length :

6.35mm

ECCN Code :

EAR99

Power - Max :

1.5W

Gain Bandwidth Product :

50MHz

REACH SVHC :

No SVHC

Number of Pins :

3

Height :

6.35mm

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

7V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

2 Weeks

JESD-609 Code :

e3

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)

Width :

6.35mm

Collector Emitter Saturation Voltage :

1.7V

Base Part Number :

MJE170

Published :

2000

Surface Mount :

No

Polarity/Channel Type :

PNP

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V