MJE15035G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Max Power Dissipation :

50W

Transistor Application :

AMPLIFIER

Collector Emitter Voltage (VCEO) :

350V

Weight :

4.535924g

Collector Emitter Saturation Voltage :

500mV

Case Connection :

COLLECTOR

Length :

10.28mm

Published :

2003

Operating Temperature :

-65°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Transition Frequency :

30MHz

Polarity/Channel Type :

PNP

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

4A

Package / Case :

TO-220-3

Element Configuration :

Single

Lead Free :

Lead Free

Number of Elements :

1

Power Dissipation :

2W

Factory Lead Time :

5 Weeks

Contact Plating :

Tin

JEDEC-95 Code :

TO-220AB

Gain Bandwidth Product :

30MHz

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Through Hole

Frequency :

30MHz

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

hFE Min :

100

Width :

4.82mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

350V

Radiation Hardening :

No

Height :

9.28mm

REACH SVHC :

No SVHC

Number of Terminations :

3

JESD-609 Code :

e3

Pin Count :

3

Current Rating :

-4A

Packaging :

Tube

Voltage - Rated DC :

-350V

Current - Collector Cutoff (Max) :

10μA ICBO

Collector Base Voltage (VCBO) :

350V

Transistor Type :

PNP

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 2A 5V

Transistor Element Material :

SILICON