MJE15031
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- Mfr.Part #
- MJE15031
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 150V 8A TO220
- Stock
- 16,951
- In Stock ：
- 16,951
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 150V
- hFE Min :
- 40
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Power - Max :
- 50W
- Length :
- 10.28mm
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 3 hours ago)
- Width :
- 4.82mm
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Gain Bandwidth Product :
- 30MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 150V
- Number of Terminations :
- 3
- Frequency :
- 30MHz
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 150V
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- -150V
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Max Collector Current :
- 8A
- Current Rating :
- -8A
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Operating Temperature :
- -65°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100μA
- Published :
- 2003
- Transition Frequency :
- 30MHz
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 2V
- Pbfree Code :
- yes
- Packaging :
- Tube
- Height :
- 9.28mm
- Weight :
- 4.535924g
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Power Dissipation :
- 2W
- Max Power Dissipation :
- 50W
- Datasheets
- MJE15031
MJE15031 Documents
PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
MJE15031G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 30MHz.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
MJE15031G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 30MHz
MJE15031G Applications
There are a lot of ON Semiconductor
MJE15031G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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