MJE15030
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- Mfr.Part #
- MJE15030
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 8A TO220
- Stock
- 14,179
- In Stock ：
- 14,179
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 30MHz
- REACH SVHC :
- No SVHC
- Height :
- 15.748mm
- Width :
- 4.826mm
- Collector Emitter Breakdown Voltage :
- 150V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Max Collector Current :
- 8A
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 150V
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Weight :
- 4.535924g
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 500mV
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 150V
- Package / Case :
- TO-220-3
- hFE Min :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Surface Mount :
- No
- Power Dissipation :
- 2W
- Length :
- 10.2616mm
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 50W
- Voltage - Rated DC :
- 150V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-220AB
- Contact Plating :
- Tin
- Current Rating :
- 8A
- Operating Temperature :
- -65°C~150°C TJ
- Frequency :
- 30MHz
- Transition Frequency :
- 30MHz
- Lead Free :
- Lead Free
- Published :
- 2003
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- Datasheets
- MJE15030
NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
MJE15030G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 30MHz.A maximum collector current of 8A volts can be achieved.
MJE15030G Features
the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz
MJE15030G Applications
There are a lot of ON Semiconductor
MJE15030G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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