MJE15029G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

2 Weeks

Max Power Dissipation :

50W

Collector Emitter Breakdown Voltage :

120V

Collector Base Voltage (VCBO) :

120V

Number of Elements :

1

Max Collector Current :

8A

Frequency :

30MHz

Case Connection :

COLLECTOR

Number of Pins :

3

Current Rating :

-8A

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Transistor Application :

AMPLIFIER

Surface Mount :

No

Transistor Element Material :

SILICON

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

120V

Contact Plating :

Tin

Transition Frequency :

30MHz

Height :

9.28mm

JESD-609 Code :

e3

Published :

2004

Radiation Hardening :

No

Voltage - Rated DC :

-120V

REACH SVHC :

No SVHC

Polarity/Channel Type :

PNP

Packaging :

Tube

Power Dissipation :

50W

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

30MHz

Operating Temperature :

-65°C~150°C TJ

hFE Min :

40

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 2V

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-220-3

Lead Free :

Lead Free

Width :

4.82mm

Length :

10.28mm

Mounting Type :

Through Hole

Weight :

4.535924g

Collector Emitter Saturation Voltage :

500mV

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Current - Collector Cutoff (Max) :

100μA

Transistor Type :

PNP