MJE13007

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Mfr.Part #
MJE13007
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 8A TO220
Stock
2,910
In Stock :
2,910

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JEDEC-95 Code :
TO-220AB
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Time@Peak Reflow Temperature-Max (s) :
40
Package / Case :
TO-220-3
Frequency :
14MHz
Current - Collector Cutoff (Max) :
100μA
Transistor Type :
NPN
Collector Emitter Saturation Voltage :
1V
Lead Free :
Lead Free
Case Connection :
COLLECTOR
Number of Terminations :
3
Max Power Dissipation :
80W
Transition Frequency :
14MHz
Element Configuration :
Single
Number of Elements :
1
Current Rating :
8A
Pin Count :
3
RoHS Status :
ROHS3 Compliant
Published :
2004
Mounting Type :
Through Hole
Length :
10.2616mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 5A 5V
Gain Bandwidth Product :
14MHz
Width :
4.826mm
Max Collector Current :
8A
Surface Mount :
No
Collector Emitter Voltage (VCEO) :
400V
hFE Min :
8
Weight :
4.535924g
Radiation Hardening :
No
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
9V
Collector Emitter Breakdown Voltage :
400V
Packaging :
Tube
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
700V
Polarity/Channel Type :
NPN
ECCN Code :
EAR99
Series :
SWITCHMODE™
Power Dissipation :
80W
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
3V @ 2A, 8A
Factory Lead Time :
9 Weeks
REACH SVHC :
No SVHC
Number of Pins :
3
Operating Temperature :
-65°C~150°C TJ
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
260
Contact Plating :
Tin
Voltage - Rated DC :
400V
Height :
15.748mm
Datasheets
MJE13007
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE13007 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, MJE13007 pinout, MJE13007 datasheet PDF, MJE13007 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE13007 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE13007


NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

MJE13007G Overview


In this device, the DC current gain is 5 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 2A, 8A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (8A).14MHz is present in the transition frequency.Maximum collector currents can be below 8A volts.

MJE13007G Features


the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 14MHz


MJE13007G Applications


There are a lot of ON Semiconductor
MJE13007G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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