MCH6663-TL-W

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

1.8A 1.5A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JESD-609 Code :

e6

Package / Case :

6-SMD, Flat Leads

FET Type :

N and P-Channel

Factory Lead Time :

7 Weeks

Drain-source On Resistance-Max :

0.188Ohm

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Continuous Drain Current (ID) :

1.5A

Drain Current-Max (Abs) (ID) :

1.8A

Mount :

Surface Mount

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

88pF @ 10V

Mounting Type :

Surface Mount

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

188m Ω @ 900mA, 10V

FET Feature :

Logic Level Gate, 4V Drive

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 10V

JESD-30 Code :

R-PDSO-F6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

Max Power Dissipation :

800mW

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.6V @ 1mA

Published :

2012