MCH6102-TL-E

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Mfr.Part #
MCH6102-TL-E
Manufacturer
onsemi
Package / Case
6-SMD, Flat Leads
Datasheet
Download
Description
TRANS PNP 30V 1.5A 6MCPH
Stock
12,457
In Stock :
12,457

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
6-SMD, Flat Leads
Mounting Type :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 2V
Operating Temperature :
150°C TJ
Factory Lead Time :
2 Weeks
Collector Emitter Voltage (VCEO) :
-375mV
Element Configuration :
Single
Radiation Hardening :
No
JESD-609 Code :
e6
Lead Free :
Lead Free
Published :
2005
Current - Collector Cutoff (Max) :
100nA ICBO
ECCN Code :
EAR99
Max Collector Current :
1.5A
Max Power Dissipation :
1W
Max Breakdown Voltage :
30V
Number of Pins :
6
Height :
830μm
Pbfree Code :
yes
hFE Min :
200
Transistor Type :
PNP
Collector Base Voltage (VCBO) :
30V
Emitter Base Voltage (VEBO) :
-5V
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Width :
1.6mm
Length :
2mm
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Collector Emitter Saturation Voltage :
-375mV
RoHS Status :
ROHS3 Compliant
Base Part Number :
MCH6102
Collector Emitter Breakdown Voltage :
30V
Packaging :
Tape and Reel (TR)
Frequency - Transition :
450MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
6
Vce Saturation (Max) @ Ib, Ic :
375mV @ 15mA, 750mA
Max Frequency :
1MHz
Datasheets
MCH6102-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi MCH6102-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:6-SMD, Flat Leads, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Number of Pins:6, Base Part Number:MCH6102, MCH6102-TL-E pinout, MCH6102-TL-E datasheet PDF, MCH6102-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MCH6102-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MCH6102-TL-E


PNP 150°C TJ 100nA ICBO 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount

MCH6102-TL-E Overview


This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -375mV.A VCE saturation (Max) of 375mV @ 15mA, 750mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.A breakdown input voltage of 30V volts can be used.A maximum collector current of 1.5A volts is possible.

MCH6102-TL-E Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -375mV
the vce saturation(Max) is 375mV @ 15mA, 750mA
the emitter base voltage is kept at -5V


MCH6102-TL-E Applications


There are a lot of ON Semiconductor
MCH6102-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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