MCH6660-TL-W

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

7 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

6

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e6

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

10V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate, 1.8V Drive

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

2A 1.5A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Number of Terminations :

6

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Package / Case :

6-SMD, Flat Leads

Drain to Source Voltage (Vdss) :

20V

Mount :

Surface Mount

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

128pF @ 10V

Pbfree Code :

yes

Terminal Position :

Dual

Lead Free :

Lead Free

Continuous Drain Current (ID) :

1.5A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

800mW

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

DS Breakdown Voltage-Min :

20V

Drain Current-Max (Abs) (ID) :

2A

FET Type :

N and P-Channel

Vgs(th) (Max) @ Id :

1.3V @ 1mA

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

136m Ω @ 1A, 4.5V