MCH6601-TL-E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

10V

Drain to Source Breakdown Voltage :

30V

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Package / Case :

6-SMD, Flat Leads

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

10.4 Ω @ 50mA, 4V

Pin Count :

6

Number of Elements :

2

Pbfree Code :

yes

Lifecycle Status :

LIFETIME (Last Updated: 1 week ago)

FET Feature :

Logic Level Gate

Rise Time :

55ns

ECCN Code :

EAR99

Fall Time (Typ) :

130 ns

Published :

2006

FET Type :

2 P-Channel (Dual)

Max Power Dissipation :

800mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

7.5pF @ 10V

Power Dissipation :

800mW

Element Configuration :

Dual

Turn-Off Delay Time :

120 ns

Lead Free :

Lead Free

JESD-609 Code :

e6

Gate Charge (Qg) (Max) @ Vgs :

1.43nC @ 10V

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

24 ns

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

200mA

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V