MCH6541-TL-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

550mW

Transistor Type :

NPN, PNP

Collector Base Voltage (VCBO) :

-30V

Radiation Hardening :

No

Surface Mount :

yes

Number of Pins :

6

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

6-SMD, Flat Leads

ECCN Code :

EAR99

JESD-609 Code :

e6

Collector Emitter Breakdown Voltage :

30V

Transition Frequency :

540MHz

Max Collector Current :

700mA

Vce Saturation (Max) @ Ib, Ic :

190mV @ 10mA, 200mA / 220mV @ 10mA, 200mA

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

190mV

Gain Bandwidth Product :

520MHz

Frequency - Transition :

540MHZ 520MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 50mA 2V / 200 @ 10mA 2V

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Polarity :

NPN, PNP

Pin Count :

6

Transistor Application :

SWITCHING

Number of Elements :

2

Element Configuration :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 9 hours ago)

Collector Emitter Saturation Voltage :

-110mV

Power - Max :

550mW

Emitter Base Voltage (VEBO) :

-5V

Max Breakdown Voltage :

30V

Factory Lead Time :

6 Weeks

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Number of Terminations :

6

Pbfree Code :

yes

Published :

2012