MCH3481-TL-W

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.104Ohm

Continuous Drain Current (ID) :

2A

Vgs(th) (Max) @ Id :

900mV @ 1mA

REACH SVHC :

No SVHC

Threshold Voltage :

900mV

Number of Terminations :

3

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

2A

Power Dissipation-Max :

800mW Ta

Factory Lead Time :

6 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 10V

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Operating Temperature :

150°C TJ

Rise Time :

27ns

JESD-609 Code :

e6

Vgs (Max) :

±9V

Number of Pins :

70

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

104m Ω @ 1A, 4.5V

Drain to Source Voltage (Vdss) :

20V

JESD-30 Code :

R-PDSO-F3

Packaging :

Cut Tape (CT)

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

9V

Lifecycle Status :

ACTIVE (Last Updated: 9 hours ago)

Mounting Type :

Surface Mount

FET Type :

N-Channel

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

20V

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 4.5V

Published :

2017

RoHS Status :

ROHS3 Compliant

Package / Case :

3-SMD, Flat Lead

Lead Free :

Lead Free

Number of Elements :

1

Transistor Application :

SWITCHING

Fall Time (Typ) :

19 ns

Turn On Delay Time :

6.6 ns

Terminal Position :

Dual

Turn-Off Delay Time :

28 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Operating Mode :

ENHANCEMENT MODE