MCH3209-TL-E

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Mfr.Part #
MCH3209-TL-E
Manufacturer
onsemi
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS NPN 30V 3A 3MCPH
Stock
2,106
In Stock :
2,106

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pbfree Code :
yes
Lead Free :
Lead Free
Power - Max :
800mW
Operating Temperature :
150°C TJ
Collector Emitter Breakdown Voltage :
30V
Factory Lead Time :
2 Weeks
Published :
2013
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Mounting Type :
Surface Mount
Frequency - Transition :
450MHz
hFE Min :
200
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Current - Collector Cutoff (Max) :
100nA ICBO
Emitter Base Voltage (VEBO) :
5V
Max Collector Current :
3A
Package / Case :
SC-70, SOT-323
Collector Base Voltage (VCBO) :
40V
Packaging :
Tape and Reel (TR)
Number of Pins :
3
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
155mV @ 75mA, 1.5A
Pin Count :
3
JESD-609 Code :
e6
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Collector Emitter Voltage (VCEO) :
180mV
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
800mW
Transistor Type :
NPN
Datasheets
MCH3209-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi MCH3209-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:SC-70, SOT-323, Number of Pins:3, MCH3209-TL-E pinout, MCH3209-TL-E datasheet PDF, MCH3209-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MCH3209-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MCH3209-TL-E


NPN 150°C TJ 100nA ICBO SC-70, SOT-323 Tape & Reel (TR) Surface Mount

MCH3209-TL-E Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 155mV @ 75mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 3A volts.

MCH3209-TL-E Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 155mV @ 75mA, 1.5A
the emitter base voltage is kept at 5V


MCH3209-TL-E Applications


There are a lot of ON Semiconductor
MCH3209-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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