MCH3106-S-TL-E
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- Mfr.Part #
- MCH3106-S-TL-E
- Manufacturer
- onsemi
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 12V 3A 3MCPH
- Stock
- 29,908
- In Stock ：
- 29,908
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 900mW
- Max Collector Current :
- 3A
- Package / Case :
- 3-SMD, Flat Lead
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 165mV
- Vce Saturation (Max) @ Ib, Ic :
- 165mV @ 30mA, 1.5A
- Frequency - Transition :
- 280MHz
- Transistor Type :
- PNP
- Max Power Dissipation :
- 900mW
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 12V
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Mounting Type :
- Surface Mount
- Datasheets
- MCH3106-S-TL-E
PNP 100nA ICBO 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
MCH3106-S-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 165mV @ 30mA, 1.5A.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
MCH3106-S-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 165mV @ 30mA, 1.5A
MCH3106-S-TL-E Applications
There are a lot of ON Semiconductor
MCH3106-S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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