MCH3382-TL-H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

23 ns

Height :

850μm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Operating Temperature :

150°C TJ

Power Dissipation :

800mW

Package / Case :

3-SMD, Flat Lead

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain Current-Max (Abs) (ID) :

2A

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 6V

Length :

2mm

Drain to Source Voltage (Vdss) :

12V

Terminal Position :

Dual

Halogen Free :

Halogen Free

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Pin Count :

3

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

198m Ω @ 1A, 4.5V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

9V

Power Dissipation-Max :

800mW Ta

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-12V

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Lead Free :

Lead Free

Published :

2012

JESD-609 Code :

e6

Fall Time (Typ) :

14 ns

Rise Time :

11ns

Number of Terminations :

3

Number of Pins :

3

Width :

1.6mm

Vgs (Max) :

±9V

Continuous Drain Current (ID) :

2A

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

4.8 ns

Drain-source On Resistance-Max :

0.198Ohm

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

FET Type :

P-Channel

ECCN Code :

EAR99