MCH3377-TL-E
- Mfr.Part #
- MCH3377-TL-E
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 12,136
- In Stock :
- 12,136
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- 3-MCPH
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Width :
- 1.6 mm
- Radiation Hardening :
- No
- Rds On Max :
- 83 mΩ
- Package / Case :
- SC-70, SOT-323
- Continuous Drain Current (ID) :
- 3 A
- Height :
- 850 µm
- Power Dissipation :
- 1 W
- Terminal Form :
- Flat
- Technology :
- MOSFET (Metal Oxide)
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 4.6 nC @ 4.5 V
- Turn-Off Delay Time :
- 42 ns
- Gate to Source Voltage (Vgs) :
- 10 V
- Drain Current-Max (Abs) (ID) :
- 3 A
- Current - Continuous Drain (Id) @ 25°C :
- 3A (Ta)
- Drain-source On Resistance-Max :
- 0.083 Ω
- FET Feature :
- -
- Manufacturer :
- ON Semiconductor
- Pin Count :
- 3
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- -20 V
- Input Capacitance :
- 375 pF
- Input Capacitance (Ciss) (Max) @ Vds :
- 375 pF @ 10 V
- Power Dissipation-Max (Abs) :
- 1 W
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 20 V
- Brand Name :
- ON Semiconductor
- Reach Compliance Code :
- not_compliant
- RoHS :
- Compliant
- Turn-On Delay Time :
- 8.1 ns
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 83mOhm @ 1.5A, 4.5V
- Max Operating Temperature :
- 150 °C
- Drain to Source Resistance :
- 83 mΩ
- JESD-609 Code :
- e6
- Rise Time :
- 26 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- P-Channel
- Package Shape :
- RECTANGULAR
- Series :
- -
- Subcategory :
- Other Transistors
- Package :
- Bulk
- Transistor Application :
- SWITCHING
- Length :
- 2 mm
- Vgs(th) (Max) @ Id :
- -
- Max Power Dissipation :
- 1 W
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Packaging :
- Cut Tape (CT)
- DS Breakdown Voltage-Min :
- 20 V
- Number of Elements :
- 1
- Product Status :
- Active
- Number of Terminals :
- 3
- Resistance :
- 83 mΩ
- JESD-30 Code :
- R-PDSO-F3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Min Operating Temperature :
- -55 °C
- Datasheets
- MCH3377-TL-E
MCH3377-TL-E Documents

MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 83mOhm @ 1.5A, 4.5V 375 pF @ 10 V 4.6 nC @ 4.5 V -20 V SC-70, SOT-323
MCH3377-TL-E Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 375 pF @ 10 V.This device conducts a continuous drain current (ID) of 3 A, which is the maximum continuous current transistor can conduct.Using VGS=20 V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20 V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 3 A.When the device is turned off, a turn-off delay time of 42 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 83 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10 V.A normal operation of the DS requires keeping the breakdown voltage above 20 V.This transistor requires a drain-source voltage (Vdss) of -20 V.
MCH3377-TL-E Features
a continuous drain current (ID) of 3 A
a drain-to-source breakdown voltage of 20 V voltage
the turn-off delay time is 42 ns
single MOSFETs transistor is 83 mΩ
a -20 V drain to source voltage (Vdss)
MCH3377-TL-E Applications
There are a lot of ON Semiconductor
MCH3377-TL-E applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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