KSE44H11
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- Mfr.Part #
- KSE44H11
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO220-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 50MHz
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Collector Emitter Voltage (VCEO) :
- 80V
- Frequency :
- 50MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Gain Bandwidth Product :
- 50MHz
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 50W
- Packaging :
- Bulk
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-220-3
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 10μA
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2A 1V
- Power - Max :
- 1.67W
- Number of Terminations :
- 3
- Published :
- 2001
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Collector Emitter Saturation Voltage :
- 1V
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Weight :
- 1.8g
- Transistor Application :
- SWITCHING
- VCEsat-Max :
- 1 V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- hFE Min :
- 60
- Current Rating :
- 10A
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 10A
- Power Dissipation :
- 50W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 80V
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 80V
- Datasheets
- KSE44H11
NPN 150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole
KSE44H11 Overview
In this device, the DC current gain is 60 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
KSE44H11 Features
the DC current gain for this device is 60 @ 2A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
KSE44H11 Applications
There are a lot of ON Semiconductor
KSE44H11 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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