KSE45H8TU
- Mfr.Part #
- KSE45H8TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A TO220-3
- Stock
- 588
- In Stock :
- 588
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 10A
- Voltage - Rated DC :
- -60V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2A 1V
- Max Power Dissipation :
- 1.67W
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -1V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- hFE Min :
- 60
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- Published :
- 2001
- Factory Lead Time :
- 6 Weeks
- JEDEC-95 Code :
- TO-220AB
- Weight :
- 1.8g
- Base Part Number :
- KSE45H
- Packaging :
- Tube
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 10μA
- Gain Bandwidth Product :
- 40MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 40MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -8A
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 40MHz
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Power Dissipation :
- 1.67W
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- -80V
- Emitter Base Voltage (VEBO) :
- -5V
- Datasheets
- KSE45H8TU

PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
KSE45H8TU Overview
DC current gain in this device equals 60 @ 2A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.As a result, the part has a transition frequency of 40MHz.In extreme cases, the collector current can be as low as 10A volts.
KSE45H8TU Features
the DC current gain for this device is 60 @ 2A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
KSE45H8TU Applications
There are a lot of ON Semiconductor
KSE45H8TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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