KSE350STU
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- Mfr.Part #
- KSE350STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A TO126-3
- Stock
- 34,788
- In Stock ：
- 34,788
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 20W
- Packaging :
- Tube
- Transition Frequency :
- 3MHz
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Max Breakdown Voltage :
- 300V
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Factory Lead Time :
- 7 Weeks
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Weight :
- 761mg
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -300V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Current Rating :
- -500mA
- hFE Min :
- 30
- Package / Case :
- TO-225AA, TO-126-3
- Published :
- 2001
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 500mA
- Max Power Dissipation :
- 20W
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -300V
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 300V
- Datasheets
- KSE350STU
PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
KSE350STU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 3MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
KSE350STU Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 3MHz
KSE350STU Applications
There are a lot of ON Semiconductor
KSE350STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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