KSE350S
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- Mfr.Part #
- KSE350S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A TO126-3
- Stock
- 1,768
- In Stock ：
- 1,768
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Max Collector Current :
- 500mA
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- -300V
- Weight :
- 761mg
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -500mA
- Max Power Dissipation :
- 20W
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- -300V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -300V
- Transistor Type :
- PNP
- hFE Min :
- 30
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 300V
- Power Dissipation :
- 20W
- JESD-30 Code :
- R-PSFM-T3
- ECCN Code :
- EAR99
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Datasheets
- KSE350S
PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
KSE350S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 50mA 10V.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
KSE350S Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
KSE350S Applications
There are a lot of ON Semiconductor
KSE350S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| KSE350STU | onsemi | 34,788 | TRANS PNP 300V 0.5A TO126-3 |
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