KSE2955TTU
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- Mfr.Part #
- KSE2955TTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A TO220-3
- Stock
- 5,572
- In Stock ：
- 5,572
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Power - Max :
- 600mW
- Current - Collector Cutoff (Max) :
- 700µA
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Frequency - Transition :
- 2MHz
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Current - Collector (Ic) (Max) :
- 10A
- Published :
- 2001
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Supplier Device Package :
- TO-220-3
- Package / Case :
- TO-220-3
- Datasheets
- KSE2955TTU
PNP 150°C TJ 700μA TO-220-3 Tube Through Hole
KSE2955TTU Overview
In this device, the DC current gain is 20 @ 4A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 8V @ 3.3A, 10A.Product comes in the supplier's device package TO-220-3.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
KSE2955TTU Features
the DC current gain for this device is 20 @ 4A 4V
the vce saturation(Max) is 8V @ 3.3A, 10A
the supplier device package of TO-220-3
KSE2955TTU Applications
There are a lot of ON Semiconductor
KSE2955TTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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