KSE200STSTU
- Mfr.Part #
- KSE200STSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 5A TO126-3
- Stock
- 6,137
- In Stock :
- 6,137
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 65MHz
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 5A
- Packaging :
- Tube
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Power - Max :
- 15W
- Datasheets
- KSE200STSTU

NPN 150°C TJ 100nA ICBO TO-225AA, TO-126-3 Tube Through Hole
KSE200STSTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 45 @ 2A 1V.When VCE saturation is 1.8V @ 1A, 5A, transistor means Ic has reached transistors maximum value (saturated).The device has a 25V maximal voltage - Collector Emitter Breakdown.
KSE200STSTU Features
the DC current gain for this device is 45 @ 2A 1V
the vce saturation(Max) is 1.8V @ 1A, 5A
KSE200STSTU Applications
There are a lot of ON Semiconductor
KSE200STSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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