KSD471AYBU
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- Mfr.Part #
- KSD471AYBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92-3
- Stock
- 3,529
- In Stock ：
- 3,529
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- hFE Min :
- 120
- Weight :
- 179mg
- Voltage - Rated DC :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Base Part Number :
- KSD471
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 1A
- Transition Frequency :
- 130MHz
- Transistor Type :
- NPN
- Factory Lead Time :
- 6 Weeks
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 1A
- Gain Bandwidth Product :
- 130MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Power Dissipation :
- 800mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Max Power Dissipation :
- 800mW
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 30V
- Mounting Type :
- Through Hole
- Published :
- 2007
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 40V
- Mount :
- Through Hole
- Frequency :
- 130MHz
- Datasheets
- KSD471AYBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSD471AYBU Overview
In this device, the DC current gain is 120 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
KSD471AYBU Features
the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
KSD471AYBU Applications
There are a lot of ON Semiconductor
KSD471AYBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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