KSD471AYBU
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- Mfr.Part #
- KSD471AYBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92-3
- Stock
- 3,529
- In Stock ：
- 3,529
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Published :
- 2007
- Base Part Number :
- KSD471
- Power Dissipation :
- 800mW
- Packaging :
- Bulk
- Factory Lead Time :
- 6 Weeks
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 1A
- Transition Frequency :
- 130MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Frequency :
- 130MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 30V
- Collector Base Voltage (VCBO) :
- 40V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Max Collector Current :
- 1A
- hFE Min :
- 120
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 30V
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 130MHz
- Max Power Dissipation :
- 800mW
- Weight :
- 179mg
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- KSD471AYBU
KSD471AYBU Documents
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSD471AYBU Overview
In this device, the DC current gain is 120 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
KSD471AYBU Features
the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
KSD471AYBU Applications
There are a lot of ON Semiconductor
KSD471AYBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
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