KSD471ACGTA
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- Mfr.Part #
- KSD471ACGTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92-3
- Stock
- 6,254
- In Stock ：
- 6,254
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- KSD471
- hFE Min :
- 120
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 1V
- Factory Lead Time :
- 8 Weeks
- Mount :
- Through Hole
- Weight :
- 240mg
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 800mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 30V
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Number of Pins :
- 3
- Frequency :
- 130MHz
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Voltage - Rated DC :
- 30V
- Gain Bandwidth Product :
- 130MHz
- Lead Free :
- Lead Free
- Max Collector Current :
- 1A
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 30V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Power Dissipation :
- 800mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 130MHz
- Datasheets
- KSD471ACGTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD471ACGTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 1V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 130MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
KSD471ACGTA Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
KSD471ACGTA Applications
There are a lot of ON Semiconductor
KSD471ACGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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