KSD471ACYTA
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- Mfr.Part #
- KSD471ACYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92-3
- Stock
- 21,361
- In Stock ：
- 21,361
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 800mW
- Mount :
- Through Hole
- Length :
- 5.2mm
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Box (TB)
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Base Voltage (VCBO) :
- 40V
- Frequency :
- 130MHz
- Radiation Hardening :
- No
- hFE Min :
- 120
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Weight :
- 240mg
- Voltage - Rated DC :
- 30V
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 5.33mm
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 130MHz
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 500mV
- Current Rating :
- 1A
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 30V
- Max Collector Current :
- 1A
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Transition Frequency :
- 130MHz
- Max Breakdown Voltage :
- 30V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Width :
- 4.19mm
- Factory Lead Time :
- 7 Weeks
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Base Part Number :
- KSD471
- Collector Emitter Voltage (VCEO) :
- 30V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation :
- 800mW
- Datasheets
- KSD471ACYTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD471ACYTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 130MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
KSD471ACYTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
KSD471ACYTA Applications
There are a lot of ON Semiconductor
KSD471ACYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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