KSD471ACYTA
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- Mfr.Part #
- KSD471ACYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92-3
- Stock
- 21,361
- In Stock ：
- 21,361
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 1A
- Width :
- 4.19mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Collector Base Voltage (VCBO) :
- 40V
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 130MHz
- Max Power Dissipation :
- 800mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 5.2mm
- Collector Emitter Saturation Voltage :
- 500mV
- Voltage - Rated DC :
- 30V
- Weight :
- 240mg
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 30V
- Max Collector Current :
- 1A
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 7 Weeks
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Published :
- 2007
- Base Part Number :
- KSD471
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 30V
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Transition Frequency :
- 130MHz
- Height :
- 5.33mm
- Frequency :
- 130MHz
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- hFE Min :
- 120
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Packaging :
- Tape and Box (TB)
- Power Dissipation :
- 800mW
- Datasheets
- KSD471ACYTA
KSD471ACYTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD471ACYTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 130MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
KSD471ACYTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
KSD471ACYTA Applications
There are a lot of ON Semiconductor
KSD471ACYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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