KSD1616GBU
- Mfr.Part #
- KSD1616GBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 1A TO92-3
- Stock
- 9,740
- In Stock :
- 9,740
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Frequency - Transition :
- 160MHz
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Surface Mount :
- No
- JESD-609 Code :
- e3
- Qualification Status :
- COMMERCIAL
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transition Frequency :
- 160MHz
- JESD-30 Code :
- O-PBCY-T3
- Mounting Type :
- Through Hole
- Terminal Finish :
- MATTE TIN
- Transistor Element Material :
- SILICON
- Current - Collector (Ic) (Max) :
- 1A
- Number of Terminations :
- 3
- Power - Max :
- 750mW
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Datasheets
- KSD1616GBU

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSD1616GBU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 160MHz in the part.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
KSD1616GBU Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
a transition frequency of 160MHz
KSD1616GBU Applications
There are a lot of Rochester Electronics, LLC
KSD1616GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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