KSD1616AGBU
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- Mfr.Part #
- KSD1616AGBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A TO92-3
- Stock
- 22,918
- In Stock ：
- 22,918
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 60V
- Terminal Position :
- BOTTOM
- Published :
- 2007
- Number of Pins :
- 3
- Max Power Dissipation :
- 750mW
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Weight :
- 179mg
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Collector Emitter Voltage (VCEO) :
- 60V
- Power Dissipation :
- 750mW
- Frequency :
- 160MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Base Part Number :
- KSD1616
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 160MHz
- Factory Lead Time :
- 6 Weeks
- Transition Frequency :
- 160MHz
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- hFE Min :
- 135
- Collector Base Voltage (VCBO) :
- 120V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- KSD1616AGBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSD1616AGBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 1A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 160MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
KSD1616AGBU Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 160MHz
KSD1616AGBU Applications
There are a lot of ON Semiconductor
KSD1616AGBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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