KSD1616A-G-AP
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- Mfr.Part #
- KSD1616A-G-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- QFN
- Datasheet
- Download
- Description
- TRANS NPN 120V 1A TO92
- Stock
- 34,010
- In Stock ：
- 34,010
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- QFN
- Screening Level :
- COMMERCIALC
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- Supplier Device Package :
- TO-92
- Mounting Type :
- Through Hole
- Package :
- Bulk
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Power - Max :
- 750 mW
- Operating Temp Range :
- -20C to 70C
- Mounting Style :
- Surface Mount
- Product Height (mm) :
- 0.75(mm)
- Packaging :
- Bulk
- Base Product Number :
- KSD1616
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 1 A
- Pin Count :
- 6
- Frequency - Transition :
- 160MHz
- Product Status :
- Obsolete
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Series :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA, 2V
- Product Depth (mm) :
- 3.2(mm)
- Product Length (mm) :
- 5(mm)
- Datasheets
- KSD1616A-G-AP
NPN -55°C ~ 150°C (TJ) 100nA (ICBO) QFN Bulk Through Hole
KSD1616A-G-AP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA, 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 50mA, 1A.TO-92 is the supplier device package for this product.This device displays a 120 V maximum voltage - Collector Emitter Breakdown.
KSD1616A-G-AP Features
the DC current gain for this device is 200 @ 100mA, 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
the supplier device package of TO-92
KSD1616A-G-AP Applications
There are a lot of Micro Commercial Components
KSD1616A-G-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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