KSD1589RTU
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- Mfr.Part #
- KSD1589RTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 5A TO220F-3
- Stock
- 34,981
- In Stock ：
- 34,981
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3 Full Pack
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3mA, 3A
- Current - Collector (Ic) (Max) :
- 5A
- Supplier Device Package :
- TO-220F
- Packaging :
- Tube
- Power - Max :
- 1.5W
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN - Darlington
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Datasheets
- KSD1589RTU
NPN - Darlington 150°C TJ 1μA ICBO TO-220-3 Full Pack Tube Through Hole
KSD1589RTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 3A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 3mA, 3A.This product comes in a TO-220F device package from the supplier.Device displays Collector Emitter Breakdown (100V maximal voltage).
KSD1589RTU Features
the DC current gain for this device is 2000 @ 3A 2V
the vce saturation(Max) is 1.5V @ 3mA, 3A
the supplier device package of TO-220F
KSD1589RTU Applications
There are a lot of ON Semiconductor
KSD1589RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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