KSD1417TU

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Mfr.Part #
KSD1417TU
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN DARL 60V 7A TO220F-3
Stock
40,631
In Stock :
40,631

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 3A 3V
Power - Max :
2W
Voltage - Collector Emitter Breakdown (Max) :
60V
Package / Case :
TO-220-3 Full Pack
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
100μA ICBO
Current - Collector (Ic) (Max) :
7A
Vce Saturation (Max) @ Ib, Ic :
2V @ 14mA, 7A
Supplier Device Package :
TO-220F
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN - Darlington
RoHS Status :
ROHS3 Compliant
Datasheets
KSD1417TU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSD1417TU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, KSD1417TU pinout, KSD1417TU datasheet PDF, KSD1417TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD1417TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSD1417TU


NPN - Darlington 100μA ICBO TO-220-3 Full Pack Tube Through Hole

KSD1417TU Overview


This device has a DC current gain of 2000 @ 3A 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-220F.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.

KSD1417TU Features


the DC current gain for this device is 2000 @ 3A 3V
the vce saturation(Max) is 2V @ 14mA, 7A
the supplier device package of TO-220F


KSD1417TU Applications


There are a lot of Rochester Electronics, LLC
KSD1417TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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