KSD1408GTU
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- Mfr.Part #
- KSD1408GTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A TO220F-3
- Stock
- 17,405
- In Stock ：
- 17,405
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Package / Case :
- TO-220-3 Full Pack
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 5V
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 300mA, 3A
- Frequency - Transition :
- 8MHz
- Power - Max :
- 25W
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 4A
- Current - Collector Cutoff (Max) :
- 30μA ICBO
- Datasheets
- KSD1408GTU
NPN 150°C TJ 30μA ICBO TO-220-3 Full Pack Tube Through Hole
KSD1408GTU Overview
This device has a DC current gain of 40 @ 500mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
KSD1408GTU Features
the DC current gain for this device is 40 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 300mA, 3A
KSD1408GTU Applications
There are a lot of ON Semiconductor
KSD1408GTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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