KSD1406OTU
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- Mfr.Part #
- KSD1406OTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220F-3
- Stock
- 20,641
- In Stock ：
- 20,641
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 3A
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Frequency - Transition :
- 3MHz
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-220-3 Full Pack
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 300mA, 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 500mA 5V
- Power - Max :
- 25W
- Packaging :
- Tube
- Datasheets
- KSD1406OTU
NPN 150°C TJ 100μA ICBO TO-220-3 Full Pack Tube Through Hole
KSD1406OTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 500mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 300mA, 3A.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
KSD1406OTU Features
the DC current gain for this device is 60 @ 500mA 5V
the vce saturation(Max) is 1V @ 300mA, 3A
KSD1406OTU Applications
There are a lot of ON Semiconductor
KSD1406OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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