KSC815YTA
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- Mfr.Part #
- KSC815YTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A TO92-3
- Stock
- 41,893
- In Stock ：
- 41,893
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 150mV
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- Max Collector Current :
- 200mA
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Max Breakdown Voltage :
- 45V
- Frequency :
- 200MHz
- Polarity/Channel Type :
- NPN
- hFE Min :
- 40
- Weight :
- 240mg
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 200MHz
- Base Part Number :
- KSC815
- Collector Emitter Voltage (VCEO) :
- 45V
- Transition Frequency :
- 200MHz
- Factory Lead Time :
- 8 Weeks
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Voltage - Rated DC :
- 45V
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 400mW
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 1V
- Current Rating :
- 200mA
- Published :
- 2007
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Box (TB)
- Mount :
- Through Hole
- Power Dissipation :
- 400mW
- Datasheets
- KSC815YTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC815YTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 1V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
KSC815YTA Features
the DC current gain for this device is 120 @ 50mA 1V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 200MHz
KSC815YTA Applications
There are a lot of ON Semiconductor
KSC815YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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