KSC815YTA
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- Mfr.Part #
- KSC815YTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A TO92-3
- Stock
- 41,893
- In Stock ：
- 41,893
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Voltage - Rated DC :
- 45V
- Frequency :
- 200MHz
- Max Breakdown Voltage :
- 45V
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 400mW
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Box (TB)
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 150mV
- Number of Pins :
- 3
- Base Part Number :
- KSC815
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Transition Frequency :
- 200MHz
- Max Power Dissipation :
- 400mW
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- 60V
- hFE Min :
- 40
- Published :
- 2007
- Gain Bandwidth Product :
- 200MHz
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 45V
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 1V
- Factory Lead Time :
- 8 Weeks
- Current Rating :
- 200mA
- Max Collector Current :
- 200mA
- Weight :
- 240mg
- Datasheets
- KSC815YTA
KSC815YTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC815YTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 1V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
KSC815YTA Features
the DC current gain for this device is 120 @ 50mA 1V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 200MHz
KSC815YTA Applications
There are a lot of ON Semiconductor
KSC815YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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