KSC815YTA
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- Mfr.Part #
- KSC815YTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A TO92-3
- Stock
- 41,893
- In Stock ：
- 41,893
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 150mV
- Factory Lead Time :
- 8 Weeks
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Transition Frequency :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Base Part Number :
- KSC815
- Max Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Mount :
- Through Hole
- Power Dissipation :
- 400mW
- Max Power Dissipation :
- 400mW
- Packaging :
- Tape and Box (TB)
- Frequency :
- 200MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- hFE Min :
- 40
- Collector Base Voltage (VCBO) :
- 60V
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 1V
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 200mA
- Polarity/Channel Type :
- NPN
- Weight :
- 240mg
- Gain Bandwidth Product :
- 200MHz
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 45V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Max Collector Current :
- 200mA
- Datasheets
- KSC815YTA
KSC815YTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC815YTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 1V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
KSC815YTA Features
the DC current gain for this device is 120 @ 50mA 1V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 200MHz
KSC815YTA Applications
There are a lot of ON Semiconductor
KSC815YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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