KSC815YTA
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- Mfr.Part #
- KSC815YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A TO92-3
- Stock
- 45,468
- In Stock ：
- 45,468
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Base Part Number :
- KSC815
- Frequency :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 200MHz
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Max Breakdown Voltage :
- 45V
- Collector Emitter Saturation Voltage :
- 150mV
- Current Rating :
- 200mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tape and Box (TB)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Weight :
- 240mg
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 45V
- hFE Min :
- 40
- Transition Frequency :
- 200MHz
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 400mW
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Max Collector Current :
- 200mA
- Published :
- 2007
- JESD-609 Code :
- e3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power Dissipation :
- 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 1V
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Datasheets
- KSC815YTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC815YTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 1V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
KSC815YTA Features
the DC current gain for this device is 120 @ 50mA 1V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 200MHz
KSC815YTA Applications
There are a lot of ON Semiconductor
KSC815YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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