KSC4010RTU

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Mfr.Part #
KSC4010RTU
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
TRANS NPN 120V 6A TO3PN
Stock
36,997
In Stock :
36,997

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Collector Emitter Breakdown (Max) :
120V
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 500mA, 5A
Current - Collector (Ic) (Max) :
6A
Power - Max :
60W
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
55 @ 1A 5V
Transistor Type :
NPN
Frequency - Transition :
30MHz
Package / Case :
TO-3P-3, SC-65-3
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Current - Collector Cutoff (Max) :
10μA ICBO
Datasheets
KSC4010RTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC4010RTU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:150°C TJ, KSC4010RTU pinout, KSC4010RTU datasheet PDF, KSC4010RTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC4010RTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC4010RTU


NPN 150°C TJ 10μA ICBO TO-3P-3, SC-65-3 Tube Through Hole

KSC4010RTU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 55 @ 1A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 500mA, 5A.Device displays Collector Emitter Breakdown (120V maximal voltage).

KSC4010RTU Features


the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 2.5V @ 500mA, 5A


KSC4010RTU Applications


There are a lot of ON Semiconductor
KSC4010RTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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