KSC3953DS
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- Mfr.Part #
- KSC3953DS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.2A TO126-3
- Stock
- 16,966
- In Stock ：
- 16,966
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Frequency - Transition :
- 400MHz
- Mounting Type :
- Through Hole
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 3mA, 30mA
- Base Part Number :
- KSC3953
- Supplier Device Package :
- TO-126-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 10V
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 1.3W
- Current - Collector (Ic) (Max) :
- 200mA
- Datasheets
- KSC3953DS
NPN 150°C TJ 100nA ICBO TO-225AA, TO-126-3 Bulk Through Hole
KSC3953DS Overview
This device has a DC current gain of 60 @ 10mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-126-3.Detection of Collector Emitter Breakdown at 120V maximal voltage is present.
KSC3953DS Features
the DC current gain for this device is 60 @ 10mA 10V
the vce saturation(Max) is 1V @ 3mA, 30mA
the supplier device package of TO-126-3
KSC3953DS Applications
There are a lot of ON Semiconductor
KSC3953DS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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