KSC388CYTA
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- Mfr.Part #
- KSC388CYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A TO92-3
- Stock
- 7,021
- In Stock ：
- 7,021
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 12.5mA 12.5V
- Gain Bandwidth Product :
- 300MHz
- Transistor Element Material :
- SILICON
- Current Rating :
- 50mA
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation :
- 300mW
- Number of Terminations :
- 3
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Lifecycle Status :
- LIFETIME (Last Updated: 6 days ago)
- Transition Frequency :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 4V
- Terminal Finish :
- Tin (Sn)
- Weight :
- 240mg
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- Max Collector Current :
- 50mA
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 200mV
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 1.5mA, 15mA
- Collector Base Voltage (VCBO) :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 20
- Base Part Number :
- KSC388
- Frequency :
- 300MHz
- Voltage - Rated DC :
- 25V
- Collector Emitter Breakdown Voltage :
- 25V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 6 Weeks
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 25V
- Published :
- 2007
- Mount :
- Through Hole
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Box (TB)
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 25V
- Datasheets
- KSC388CYTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC388CYTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 12.5mA 12.5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 1.5mA, 15mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 50mA volts.
KSC388CYTA Features
the DC current gain for this device is 20 @ 12.5mA 12.5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 1.5mA, 15mA
the emitter base voltage is kept at 4V
the current rating of this device is 50mA
a transition frequency of 300MHz
KSC388CYTA Applications
There are a lot of ON Semiconductor
KSC388CYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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