KSC388CYTA
- Mfr.Part #
- KSC388CYTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A TO92-3
- Stock
- 7,021
- In Stock :
- 7,021
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 25V
- Gain Bandwidth Product :
- 300MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- hFE Min :
- 20
- Max Power Dissipation :
- 300mW
- Max Collector Current :
- 50mA
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Weight :
- 240mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 1.5mA, 15mA
- Base Part Number :
- KSC388
- Packaging :
- Tape and Box (TB)
- Lifecycle Status :
- LIFETIME (Last Updated: 6 days ago)
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 30V
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mount :
- Through Hole
- Frequency :
- 300MHz
- Max Breakdown Voltage :
- 25V
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 4V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 6 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 12.5mA 12.5V
- Current Rating :
- 50mA
- Collector Emitter Saturation Voltage :
- 200mV
- Number of Terminations :
- 3
- Power Dissipation :
- 300mW
- Voltage - Rated DC :
- 25V
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 25V
- Transition Frequency :
- 300MHz
- Number of Pins :
- 3
- Datasheets
- KSC388CYTA
KSC388CYTA Documents

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC388CYTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 12.5mA 12.5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 1.5mA, 15mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 50mA volts.
KSC388CYTA Features
the DC current gain for this device is 20 @ 12.5mA 12.5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 1.5mA, 15mA
the emitter base voltage is kept at 4V
the current rating of this device is 50mA
a transition frequency of 300MHz
KSC388CYTA Applications
There are a lot of ON Semiconductor
KSC388CYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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