KSC388CYBU
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- Mfr.Part #
- KSC388CYBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A TO92-3
- Stock
- 40,974
- In Stock ：
- 40,974
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 50mA
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 1.5mA, 15mA
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- KSC388
- Frequency - Transition :
- 300MHz
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 12.5mA 12.5V
- Power - Max :
- 300mW
- Transistor Type :
- NPN
- Datasheets
- KSC388CYBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC388CYBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 12.5mA 12.5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 1.5mA, 15mA.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.
KSC388CYBU Features
the DC current gain for this device is 20 @ 12.5mA 12.5V
the vce saturation(Max) is 200mV @ 1.5mA, 15mA
KSC388CYBU Applications
There are a lot of ON Semiconductor
KSC388CYBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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