KSC3552RTU
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- Mfr.Part #
- KSC3552RTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 12A TO3P
- Stock
- 31,173
- In Stock ：
- 31,173
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-3P
- Voltage - Collector Emitter Breakdown (Max) :
- 800V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 800mA 5V
- Current - Collector (Ic) (Max) :
- 12A
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 1.2A, 6A
- Transistor Type :
- NPN
- Package / Case :
- TO-3P-3, SC-65-3
- Power - Max :
- 150W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 15MHz
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Datasheets
- KSC3552RTU
NPN 150°C TJ 10μA ICBO TO-3P-3, SC-65-3 Tube Through Hole
KSC3552RTU Overview
This device has a DC current gain of 15 @ 800mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-3P.Detection of Collector Emitter Breakdown at 800V maximal voltage is present.
KSC3552RTU Features
the DC current gain for this device is 15 @ 800mA 5V
the vce saturation(Max) is 2V @ 1.2A, 6A
the supplier device package of TO-3P
KSC3552RTU Applications
There are a lot of ON Semiconductor
KSC3552RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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