KSC3552NTU
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- Mfr.Part #
- KSC3552NTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 12A TO3P
- Stock
- 32,019
- In Stock ：
- 32,019
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 800V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-3P-3, SC-65-3
- Frequency - Transition :
- 15MHz
- Current - Collector (Ic) (Max) :
- 12A
- Power - Max :
- 150W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 800mA 5V
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 1.2A, 6A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Packaging :
- Tube
- Supplier Device Package :
- TO-3P
- Mounting Type :
- Through Hole
- Datasheets
- KSC3552NTU
NPN 150°C TJ 10μA ICBO TO-3P-3, SC-65-3 Tube Through Hole
KSC3552NTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 800mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 1.2A, 6A.This product comes in a TO-3P device package from the supplier.Device displays Collector Emitter Breakdown (800V maximal voltage).
KSC3552NTU Features
the DC current gain for this device is 10 @ 800mA 5V
the vce saturation(Max) is 2V @ 1.2A, 6A
the supplier device package of TO-3P
KSC3552NTU Applications
There are a lot of ON Semiconductor
KSC3552NTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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