KSC3503DS
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- Mfr.Part #
- KSC3503DS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO126-3
- Stock
- 15,392
- In Stock ：
- 15,392
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 300V
- Gain Bandwidth Product :
- 150MHz
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 10V
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Power Dissipation :
- 7W
- Voltage - Rated DC :
- 300V
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Base Part Number :
- KSC3503
- Collector Emitter Voltage (VCEO) :
- 300V
- Frequency :
- 150MHz
- Mount :
- Through Hole
- Weight :
- 761mg
- Collector Emitter Saturation Voltage :
- 600mV
- Max Collector Current :
- 100mA
- hFE Min :
- 40
- Number of Pins :
- 3
- Current Rating :
- 100mA
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 6 Weeks
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 300V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 2mA, 20mA
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 7W
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 150MHz
- Datasheets
- KSC3503DS
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
KSC3503DS Overview
DC current gain in this device equals 60 @ 10mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 2mA, 20mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 150MHz.In extreme cases, the collector current can be as low as 100mA volts.
KSC3503DS Features
the DC current gain for this device is 60 @ 10mA 10V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 150MHz
KSC3503DS Applications
There are a lot of ON Semiconductor
KSC3503DS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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