KSB1151YSTSTU
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- Mfr.Part #
- KSB1151YSTSTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 5A TO126-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 1.3W
- Base Part Number :
- KSB1151
- Mounting Type :
- Through Hole
- Weight :
- 758.009549mg
- Lead Free :
- Lead Free
- Current Rating :
- -5A
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- -60V
- Transistor Type :
- PNP
- Packaging :
- Tube
- hFE Min :
- 100
- Power Dissipation :
- 1.3W
- Number of Pins :
- 3
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 2A 1V
- Package / Case :
- TO-225AA, TO-126-3
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Max Collector Current :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- -7V
- Collector Emitter Saturation Voltage :
- -140mV
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- KSB1151YSTSTU
PNP 150°C TJ 10μA ICBO 1 Elements TO-225AA, TO-126-3 Tube Through Hole
KSB1151YSTSTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 2A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -140mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 200mA, 2A.The emitter base voltage can be kept at -7V for high efficiency.The current rating of this fuse is -5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
KSB1151YSTSTU Features
the DC current gain for this device is 160 @ 2A 1V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -5A
KSB1151YSTSTU Applications
There are a lot of ON Semiconductor
KSB1151YSTSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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