KSB1151YSTSSTU
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- Mfr.Part #
- KSB1151YSTSSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 5A TO126-3
- Stock
- 39,384
- In Stock ：
- 39,384
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 1.3W
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -60V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Max Collector Current :
- 5A
- Collector Emitter Saturation Voltage :
- -140mV
- Emitter Base Voltage (VEBO) :
- -7V
- Power Dissipation :
- 1.3W
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 2A 1V
- hFE Min :
- 100
- Packaging :
- Tube
- Number of Elements :
- 1
- Mount :
- Through Hole
- Base Part Number :
- KSB1151
- Voltage - Rated DC :
- -60V
- Lead Free :
- Lead Free
- Weight :
- 758mg
- Current Rating :
- -5A
- Collector Emitter Voltage (VCEO) :
- 60V
- Package / Case :
- TO-225AA, TO-126-3
- Datasheets
- KSB1151YSTSSTU
PNP 150°C TJ 10μA ICBO 1 Elements TO-225AA, TO-126-3 Tube Through Hole
KSB1151YSTSSTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 2A 1V.The collector emitter saturation voltage is -140mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -5A.A maximum collector current of 5A volts can be achieved.
KSB1151YSTSSTU Features
the DC current gain for this device is 160 @ 2A 1V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -5A
KSB1151YSTSSTU Applications
There are a lot of ON Semiconductor
KSB1151YSTSSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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