KSB1149YSTU
- Mfr.Part #
- KSB1149YSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 3A TO126-3
- Stock
- 14,199
- In Stock :
- 14,199
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-225AA, TO-126-3
- Mounting Type :
- Through Hole
- Base Part Number :
- KSB1149
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 1.5mA, 1.5A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 3A
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Transistor Type :
- PNP - Darlington
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4000 @ 1.5A 2V
- Operating Temperature :
- 150°C TJ
- Power - Max :
- 1.3W
- Datasheets
- KSB1149YSTU

PNP - Darlington 150°C TJ 10μA ICBO TO-225AA, TO-126-3 Tube Through Hole
KSB1149YSTU Overview
In this device, the DC current gain is 4000 @ 1.5A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 1.5mA, 1.5A.There is a 100V maximal voltage in the device due to collector-emitter breakdown.
KSB1149YSTU Features
the DC current gain for this device is 4000 @ 1.5A 2V
the vce saturation(Max) is 1.2V @ 1.5mA, 1.5A
KSB1149YSTU Applications
There are a lot of ON Semiconductor
KSB1149YSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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