KSB1116LBU
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- Mfr.Part #
- KSB1116LBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 1A TO92-3
- Stock
- 11,340
- In Stock ：
- 11,340
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Base Part Number :
- KSB1116
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 120MHz
- Transistor Type :
- PNP
- Power - Max :
- 750mW
- Operating Temperature :
- 150°C TJ
- Supplier Device Package :
- TO-92-3
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector (Ic) (Max) :
- 1A
- Datasheets
- KSB1116LBU
PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
KSB1116LBU Overview
DC current gain in this device equals 300 @ 100mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 50mA, 1A.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSB1116LBU Features
the DC current gain for this device is 300 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
the supplier device package of TO-92-3
KSB1116LBU Applications
There are a lot of ON Semiconductor
KSB1116LBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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