KSA812YMTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Weight :

30mg

Element Configuration :

Single

Operating Temperature :

150°C TJ

Number of Terminations :

3

JESD-609 Code :

e3

Frequency :

180MHz

Length :

2.9mm

Collector Emitter Saturation Voltage :

-180mV

Transistor Application :

AMPLIFIER

Voltage - Rated DC :

-50V

Collector Emitter Voltage (VCEO) :

50V

Current Rating :

-100mA

Transition Frequency :

180MHz

Width :

1.3mm

Lead Free :

Lead Free

Terminal Position :

Dual

Number of Pins :

3

Power Dissipation :

150mW

Height :

970μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

135 @ 1mA 6V

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

KSA812

Max Power Dissipation :

150mW

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Emitter Base Voltage (VEBO) :

-5V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gain Bandwidth Product :

180MHz

Transistor Type :

PNP

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA ICBO

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

-60V

Number of Elements :

1

Terminal Form :

Gull wing

Radiation Hardening :

No

hFE Min :

90

Published :

2001

Max Breakdown Voltage :

50V

Mount :

Surface Mount

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)