KSA812YMTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

150mW

Transistor Type :

PNP

Gain Bandwidth Product :

180MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Height :

970μm

Current Rating :

-100mA

Collector Emitter Saturation Voltage :

-180mV

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Base Part Number :

KSA812

Collector Emitter Voltage (VCEO) :

50V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Collector Base Voltage (VCBO) :

-60V

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

100nA ICBO

Radiation Hardening :

No

Max Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Transistor Element Material :

SILICON

Transition Frequency :

180MHz

Published :

2001

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

JESD-609 Code :

e3

Voltage - Rated DC :

-50V

Mounting Type :

Surface Mount

Width :

1.3mm

Frequency :

180MHz

Mount :

Surface Mount

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Weight :

30mg

Emitter Base Voltage (VEBO) :

-5V

hFE Min :

90

Lead Free :

Lead Free

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Polarity/Channel Type :

PNP

Length :

2.9mm

Max Power Dissipation :

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

135 @ 1mA 6V

Operating Temperature :

150°C TJ

Element Configuration :

Single